General Purpose and Low VCE(sat) Transistors | 2SC5242

NPN エピタキシャルシリコントランジスター

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Overview

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  • 高電流能力: IC=15A
  • 高いワット損: 130W
  • 高周波数: 30MHz
  • 高電圧: VCEO=-250V
  • 信頼性の高い動作のための広いS.O.A
  • 低THDのための優れた利得リニアリティ
  • 2SA1962/FJA4213を補完
  • 熱および電気Spiceモデルが入手可能

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2SC5242OTU

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Lifetime

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

NPN

General Purpose

3

17

250

250

5

-

1

80

160

30

130

$2.107

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2SC5242RTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

NPN

General Purpose

3

17

250

250

5

-

1

55

110

30

130

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2SC5242OTU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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