General Purpose and Low VCE(sat) Transistors | 2SC5658RM3

小信号汎用 NPN トランジスタ

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Overview

この NPN トランジスタは汎用アンプ・アプリケーション向けに設計されています。基板スペースの節約が重要となる低電力表面実装アプリケーション向けに設計された SOT-723 パッケージで提供されます。

  • Reduces Board Space

  • High hFE, 210460 (typical)
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • This is a PbFree Device

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2SC5658RM3T5G

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Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.4

0.1

50

50

7

-

-

215

375

180

0.26

$0.0368

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信頼性データ

Die Related Summary Data

Device: 2SC5658RM3T5G

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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