General Purpose and Low VCE(sat) Transistors | KSA473

PNP エピタキシャルシリコントランジスター

Obsolete

Datasheet

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Overview

The PNP Epitaxial Silicon Transistor is designed for use in amplifier and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

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  • -

  • コレクター電流: IC= -3 A
  • コレクター損失: PC= 10 W (TC=25°C)
  • KSC1173を補完する

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSA473YTSTUA

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340AY

NA

0

TUBE

1000

N

PNP

General Purpose

0.8

3

30

30

5

-

1

70

240

100

10

Price N/A

More Details

KSA473YTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

PNP

General Purpose

0.8

3

30

30

5

-

1

70

240

100

10

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: KSA473YTSTUA

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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