General Purpose and Low VCE(sat) Transistors | KSB1151

PNP エピタキシャルシリコントランジスター

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  • 低いコレクタ
  • エミッター間飽和電圧
  • 大きなコレクター電流
  • 高いワット損: PC= 1.3 W (Ta=25°C)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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KSB1151YS

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

N

PNP

General Purpose

0.3

5

60

60

7

1.2

-

160

320

-

1.3

Price N/A

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KSB1151YSTU

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Last Shipments

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

PNP

General Purpose

0.3

5

60

60

7

1.2

-

160

320

-

1.3

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: KSB1151YS

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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