General Purpose and Low VCE(sat) Transistors | BD179

3.0 A、80 V 中電力 NPN バイポーラ・パワートランジスタ

Obsolete

Datasheet

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Overview

この中電力 NPN バイポーラ・パワートランジスタは、相補型または準相補型回路を利用する 5.0 から 10 ワットのオーディオアンプおよびドライバで使用するために設計されています。

  • DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc
  • BD179 is complementary with BD180
  • Pb-Free Package is Available

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CAD Model

CAD Model

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD179

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

-

General Purpose

0.8

3

-

-

-

-

-

63

160

3

30

Price N/A

More Details

BD179G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.8

3

80

80

5

-

1.3

63

160

3

30

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: BD179G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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