General Purpose and Low VCE(sat) Transistors | BD243C

6.0 A、100 V NPNバイポーラ・パワートランジスタ

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Overview

6A 100 VバイポーラPNPパワートランジスタは、汎用アンプやスイッチング・アプリケーションで使用するために設計されています。BD243B、BD243C (NPN); BD244B、BD244C (PNP) は相補型デバイスです。

  • Collector - Emitter Saturation Voltage -
    VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
  • Collector Emitter Sustaining Voltage -
    VCEO(sus) = 80 Vdc (Min) BD243B, BD244B
    VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C
  • High Current Gain Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD243CG

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

Y

NPN

General Purpose

1.5

6

100

100

5

-

2

20

-

3

65

$0.4805

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Die Related Summary Data

Device: BD243CG

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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