General Purpose and Low VCE(sat) Transistors | BUH51

NPN、シリコン・プラスチック・トランジスタ

Obsolete

Datasheet

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Overview

BUH51 は、u 50 W ハロゲン電子回路用変成器向けに設計されたアプリケーション固有の最先端のダイを搭載しています。このパワートランジスタは、スタートアップの状態でも、負荷間の短絡時でも、大きな突入電流に耐えられるように特別に設計されています。この高電圧/高速製品には主に以下のような特長があります。

  • Improved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching
  • Robustness Thanks to the Technology Developed to Manufacture this Device
  • Motorola "6 SIGMA" Philosophy Providing Tight and Reproducible Parametric Distributions
  • This device is available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BUH51

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

-

General Purpose

-

-

-

-

-

-

-

8

-

23

50

Price N/A

More Details

BUH51G

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

-

-

500

-

-

-

-

8

-

23

50

Price N/A

More Details

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