General Purpose and Low VCE(sat) Transistors | BUT11AF

10 Amp、450 V NPN パワー・バイポーラ・トランジスタ

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Overview

10 Amp、450 V NPN パワー・バイポーラ・トランジスタ

  • Low Base Drive Requirements
  • Isolated Overmold Package
  • Improved System Efficiency
  • No Isolating Washers Required
  • Reduced System Cost

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

BUT11AFTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

No

NPN

General Purpose

1.5

5

450

1000

9

1.3

-

-

-

-

40

Price N/A

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信頼性データ

Die Related Summary Data

Device: BUT11AFTU

Equivalent to wafer fab process: TM

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等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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