General Purpose and Low VCE(sat) Transistors | BUV21

40 A、200V NPN バイポーラ・パワートランジスタ

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Overview

この 40 A、200 V NPN バイポーラ・パワートランジスタは、高速、高電流、ハイパワー・アプリケーション向けに設計されています。

  • High DC current gain:
    hFE min. = 20 at IC = 12 A
  • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
  • Very fast switching times: TF max. = 0.4 µs at IC=25A
  • Pb-Free Package is Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BUV21G

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CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

Y

NPN

General Purpose

0.6

40

200

250

7

1.5

-

20

60

8

250

$13.3714

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信頼性データ

Die Related Summary Data

Device: BUV21G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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