General Purpose and Low VCE(sat) Transistors | CPH6123

Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single CPH6

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Overview

CPH6123は、大電流スイッチング用Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single CPH6である。

  • DC-DC コンバータ, リレードライブ, ランプドライブ, モータドライブ, ストロボ

  • MBITプロセス採用
  • 電流容量が大きい
  • コレクタ・エミッタ飽和電圧が低い
  • スイッチングスピードが速い
  • 超小型パッケージのため、セットの小型化、薄型化が可能である(実装高0.9mm)
  • 許容損失が大きい

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

CPH6123-TL-E

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CAD Model

Pb

A

H

P

CPH-6

318BD

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.23

3

50

100

6

0.88

-

200

560

390

1.3

$0.1395

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信頼性データ

Die Related Summary Data

Device: CPH6123-TL-E

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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