General Purpose and Low VCE(sat) Transistors | ECH8501

Bipolar Transistor, (-)30V, (-)30A, Low VCE(sat), Complementary Dual

Obsolete

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Overview

ECH8501は、ゲートドライブ用Bipolar Transistor, (-)30V, (-)30A, Low VCE(sat), Complementary Dualである。

  • 複合タイプであり、高密度実装可能
  • コレクタ・エミッタ飽和電圧が低い
    NPN : VCE(sat)=0.075V(typ)@IC=2.5A
    PNP : VCE(sat)=-0.1V(typ)@IC=-2.5A
  • ハロゲンフリー対応
  • 実装高0.9mm

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Product services, tools and other useful resources related to ECH8501

CAD Model

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

ECH8501-TL-H

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Obsolete

CAD Model

Pb

A

H

P

SOT-28 FL / ECH-8

318BF

1

260

REEL

3000

No

Complementary

Low VCE(sat)

0.17

5

30

40

6

0.85

-

200

560

280

1.6

Price N/A

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信頼性データ

Die Related Summary Data

Device: ECH8501-TL-H

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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