ECH8501

Bipolar Transistor, (-)30V, (-)30A, Low VCE(sat), Complementary Dual

Overview

ECH8501は、ゲートドライブ用Bipolar Transistor, (-)30V, (-)30A, Low VCE(sat), Complementary Dualである。

特長

複合タイプであり、高密度実装可能
コレクタ・エミッタ飽和電圧が低い
NPN : VCE(sat)=0.075V(typ)@IC=2.5A
PNP : VCE(sat)=-0.1V(typ)@IC=-2.5A
ハロゲンフリー対応
実装高0.9mm

材料組成

製品変更通知

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Orderable Parts:

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Reference Price

ECH8501-TL-H

Last Shipments

SOT-28 FL / ECH-8

318BF

260

REEL

3000

Complementary

Low V_CE(sat)

0.17

0.85

200

560

280

1.6

Price N/A

製品番号:

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General Purpose and Low VCE(sat) Transistors | ECH8501

Bipolar Transistor, (-)30V, (-)30A, Low VCE(sat), Complementary Dual

Overview

Product List

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