General Purpose and Low VCE(sat) Transistors | FJA4213

PNP エピタキシャルシリコントランジスター

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  • 高電流能力: IC = -15 A
  • 高いワット損: 130W
  • 高周波数 : 30 MHz
  • 高電圧: VCEO= -250 V
  • 信頼性の高い動作が可能な幅広いS.O.A
  • 低THDで優れた利得線形性
  • 2SC5242/FJA4313を補完
  • 熱および電気的Spiceモデルが入手可能
  • 高忠実性オーディオ出力アンプ
  • 汎用パワーアンプ

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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FJA4213OTU

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Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

PNP

General Purpose

3

17

250

250

5

-

1

80

160

30

130

Price N/A

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FJA4213RTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

PNP

General Purpose

3

17

250

250

5

-

1

55

110

30

130

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: FJA4213OTU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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