汎用および低VCE (sat) トランジスタ | FJB102

100V 高電圧パワーダーリントントランジスター

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Overview

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  • 高DC電流利得： hFE=1000 @ VCE= 4 V、IC= 3 A (最小)
  • 低いコレクタ -エミッター間飽和電圧
  • 高コレクター-エミッター維持電圧:
  • ベース－エミッターシャント抵抗内蔵のモノリシック構造
  • 産業用途

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

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FJB102TM

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

No

NPN

High-Voltage Power Transistor

2.5

8

100

100

5

-

2.8

200

20000

-

80

10.16 x 15.24 x 4.45

$0.4643

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信頼性データ

Die Related Summary Data

Device: FJB102TM

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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