General Purpose and Low VCE(sat) Transistors | FJD5555

高電圧高速スイッチング・トランジスタ

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Overview

FJD5555 は 1050 V 5 A NPN シリコン・エピタキシャル・プレーナ型トランジスタです。FJD5555 は、業界標準表面実装 TO-252 (DPAK) パッケージを活用して高速スイッチング・アプリケーション向けに設計され、柔軟な設計や優れた電力消費を可能にします。

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  • 高電圧能力
  • 高速スイッチング
  • 幅広い安全動作領域

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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FJD5555TM

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

No

NPN

Silicon Transistor

1.5

5

400

1050

14

1.2

-

20

40

-

100

$0.3028

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信頼性データ

Die Related Summary Data

Device: FJD5555TM

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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