General Purpose and Low VCE(sat) Transistors | FJE5304D

NPN トリプル拡散プレーナシリコントランジスター

Lifetime

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  • 高電圧、高速なパワースイッチアプリケーション
  • 広い安全動作領域
  • 内蔵フリーホイールダイオード
  • 電子バラスト用途に最適
  • 保存時間のばらつきが小さい

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJE5304D

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Lifetime

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

N

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1.5

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400

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FJE5304DTU

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Lifetime

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

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1.5

4

400

700

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1.3

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8

40

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30

$0.3799

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信頼性データ

Die Related Summary Data

Device: FJE5304D

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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