General Purpose and Low VCE(sat) Transistors | FJI5603D

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  • 広い安全動作領域
  • 保存時間のばらつきが小さい
  • 内蔵フリーホイーリングダイオード
  • 高電圧と高速電源スイッチ用途
  • 電子バラスト用途

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

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FJI5603DTU

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CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

418AV

NA

0

TUBE

1000

Yes

NPN

Silicon Transistor

2.5

3

800

1600

12

1.2

-

20

35

5

100

10.35 x 9.97 x 4.45

$0.7978

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信頼性データ

Die Related Summary Data

Device: FJI5603DTU

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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