General Purpose and Low VCE(sat) Transistors | FJL4215

PNP エピタキシャルシリコントランジスター

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  • 高電流能力: IC = -15 A
  • 高いワット損: 150W
  • 高周波数 : 30 MHz
  • 高電圧: VCEO=-250V
  • 信頼性の高い動作のための広いS.O.A
  • 低THDのための優れた利得リニアリティ
  • 2SC5200/FJL4315を補完する
  • 完全な熱および電気Spiceモデルが入手可能

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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FJL4215OTU

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Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

No

PNP

General Purpose

3

17

250

250

5

-

1.5

55

160

30

150

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信頼性データ

Die Related Summary Data

Device: FJL4215OTU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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