General Purpose and Low VCE(sat) Transistors | FJN3303F

高電圧高速スイッチング NPNパワートランジスター

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  • 高電圧能力
  • 高速スイッチング
  • 電子バラストと充電器に最適
  • グリーンなパッケージ

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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FJN3303FBU

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Obsolete

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Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

N

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3

1.5

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FJN3303FTA

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CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

High Voltage Fast-Switching Power Transistor

3

1.5

400

700

9

1.2

-

14

23

4

1.1

Price N/A

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信頼性データ

Die Related Summary Data

Device: FJN3303FBU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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