General Purpose and Low VCE(sat) Transistors | FJP13009

高電圧高速スイッチング NPN パワートランジスタ

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Overview

FJP13009 は 700 V、12 A NPN シリコン・エピタキシャル・プレーナ型トランジスタです。FJP13009 は設計に使いやすい複数の hFE ビン・クラスで提供されます。FJP13009 は業界標準 TO-220 パッケージを活用して高速スイッチングアプリケーション向けに設計され、柔軟な設計や優れた電力損失を可能にします。

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  • 高電圧容量
  • 高速スイッチング

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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FJP13009H2TU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

High Voltage Fast-Switching Power Transistor

3

12

400

700

9

1.6

-

15

40

4

100

$0.8478

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FJP13009TU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

High Voltage Fast-Switching Power Transistor

3

12

400

700

9

1.6

-

8

40

4

100

$0.5733

More Details

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信頼性データ

Die Related Summary Data

Device: FJP13009H2TU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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