General Purpose and Low VCE(sat) Transistors | FJP5555

NPN シリコントランジスター

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Overview

FJP5555 は、1050 V 5 A NPNシリコンエピタキシャルプレーナトランジスターです。 FJP5555は、デザインの柔軟性と優れたワット損を提供する業界標準のTO-220パッケージを利用した高速スイッチング用途向けに設計されています。

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJP5555TU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

Silicon Transistor

1.5

5

400

1050

14

1.2

-

20

40

-

75

$0.4281

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信頼性データ

Die Related Summary Data

Device: FJP5555TU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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