General Purpose and Low VCE(sat) Transistors | FJPF13007

NPN シリコン・トランジスタ

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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FJPF13007H1TTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

High Voltage High Speed Power Switching Transistor

3

8

400

700

9

1.6

-

15

28

4

40

Price N/A

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FJPF13007H2TU

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Lifetime

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

High Voltage High Speed Power Switching Transistor

3

8

400

700

9

1.6

-

26

39

4

40

$0.3531

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信頼性データ

Die Related Summary Data

Device: FJPF13007H1TTU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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