General Purpose and Low VCE(sat) Transistors | FMB2227A

NPN および PNP 相補型デュアル・トランジスタ

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Overview

この相補型デバイスは、最大 500 mA のコレクタ電流を必要とする中電力アンプ/スイッチとして使用します。ソースはプロセス 19 と 63 です。特性については、FFB2222A (NPN)、および FFB2907A (PNP) を参照してください。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

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FMB2227A

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Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

No

Complementary

General Purpose

1.4

0.5

30

60

5

1.3

-

30

-

250

0.7

2.95 x 2.75 x 1.00

$0.1165

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Die Related Summary Data

Device: FMB2227A

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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