General Purpose and Low VCE(sat) Transistors | FMB5551

NPN 汎用アンプ

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  • このデバイスは、汎用高電圧アンプとガスディスチャージディスプレイ駆動向けに設計されています。
  • プロセス16から供給。
  • 特長については、MMBT5551を参照してください。NPN汎用アンプSuperSOT-6表面実装パッケージ

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FMB5551

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

NPN

General Purpose

0.2

0.6

160

180

6

1

-

80

250

100

0.7

$0.0984

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Die Related Summary Data

Device: FMB5551

Equivalent to wafer fab process: SST

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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