General Purpose and Low VCE(sat) Transistors | FMMT549

PNP 低飽和トランジスター

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  • このデバイスは、最大連続2Aのコレクター電流を持つ、高電流利得と低飽和電圧で設計されています。
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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

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PTM Max (W)

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FMMT549

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.75

1

30

35

5

1.25

1

100

300

100

0.5

$0.0873

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Die Related Summary Data

Device: FMMT549

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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