General Purpose and Low VCE(sat) Transistors | FSB560

NPN 低飽和トランジスタ

Lifetime

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Overview

これらのデバイスは、最大 2A の連続コレクタ電流、および高電流ゲインと低飽和電圧を想定して設計されています。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FSB560

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Lifetime

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

NPN

Low VCE(sat)

0.35

2

60

80

5

1.25

1

100

300

75

0.5

$0.1427

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信頼性データ

Die Related Summary Data

Device: FSB560

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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