General Purpose and Low VCE(sat) Transistors | FSB660A

PNP 低飽和トランジスター

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Overview

これらのデバイスは連続で最大2Aのコレクター電流の、高電流利得および低飽和電圧のために設計されています。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FSB660A

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.3

2

60

60

5

1.25

1

250

550

75

0.5

$0.1284

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Die Related Summary Data

Device: FSB660A

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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