General Purpose and Low VCE(sat) Transistors | FSB660A

PNP 低飽和トランジスター

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Overview

これらのデバイスは連続で最大2Aのコレクター電流の、高電流利得および低飽和電圧のために設計されています。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FSB660A

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Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.3

2

60

60

5

1.25

1

250

550

75

0.5

$0.1284

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