General Purpose and Low VCE(sat) Transistors | FZT3019

NPN 中出力トランジスター

Obsolete

Datasheet

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Overview

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  • このデバイスは汎用中出力アンプと、500 mAまでのコレクター電流と80 Vまでのコレクター電圧を必要とするスイッチングのために設計されています。
  • プロセス12から供給

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

FZT3019

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Obsolete

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

No

NPN

General Purpose

0.5

1

80

140

7

1.1

-

100

300

100

1

Price N/A

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信頼性データ

Die Related Summary Data

Device: FZT3019

Equivalent to wafer fab process: SST

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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