General Purpose and Low VCE(sat) Transistors | KSA643

PNP エピタキシャルシリコントランジスター

Obsolete

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Overview

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  • 低周波数パワーアンプ
  • コレクター損失: PC =500mW
  • KSD261を補完
  • サフィックス「-C」はセンターコレクターの意味です (1.エミッター 2.コレクター 3.ベース)

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

KSA643YTA

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Obsolete

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

No

PNP

General Purpose

0.4

0.5

20

40

5

1.3

-

120

240

-

0.5

Price N/A

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信頼性データ

Die Related Summary Data

Device: KSA643YTA

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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