General Purpose and Low VCE(sat) Transistors | KSA708

PNP エピタキシャルシリコントランジスター

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Overview

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  • 低周波数アンプおよび中速スイッチング
  • KSC1008を補完
  • コレクター-ベース電圧: VCBO = -80V
  • コレクター損失: PC = 800mW
  • サフィックス「-C」はセンターコレクターの意味です (1.エミッター 2.コレクター 3.ベース)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSA708CYTA

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Last Shipments

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CAD Model

Pb

A

H

P

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0

FNFLD

2000

N

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0.7

0.7

60

80

8

1.1

-

120

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0.8

Price N/A

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KSA708YBU

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Lifetime

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CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

N

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0.7

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60

80

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$0.0505

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KSA708YTA

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Lifetime

Similar Products
CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

PNP

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0.7

0.7

60

80

8

1.1

-

120

240

50

0.8

$0.0547

More Details

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信頼性データ

Die Related Summary Data

Device: KSA708CYTA

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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