General Purpose and Low VCE(sat) Transistors | KSB834W

PNP エピタキシャルシリコントランジスター

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  • LOW 周波数パワーアンプ
  • KSD880Wを補完

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状態

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

KSB834WYTM

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

No

PNP

General Purpose

1

3

60

60

7

-

1

100

200

9

1.5

Price N/A

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信頼性データ

Die Related Summary Data

Device: KSB834WYTM

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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