General Purpose and Low VCE(sat) Transistors | KSC1009

NPN エピタキシャルシリコントランジスター

Obsolete

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Overview

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  • 高コレクター-ベース間電圧: VC=160V
  • コレクター電流: I C =700mA
  • コレクター損失: PC =800mW
  • KSA709を補完
  • サフィックス「-C」はセンターコレクターの意味です (1.エミッター2.コレクター3.ベース）高電圧アンプ

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSC1009YTA

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Obsolete

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

General Purpose

0.7

0.7

140

160

8

1

-

120

240

30

0.8

Price N/A

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信頼性データ

Die Related Summary Data

Device: KSC1009YTA

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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