General Purpose and Low VCE(sat) Transistors | KSD1692

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  • 高いDC電流利得：
  • 低いコレクタ -エミッター間飽和電圧
  • 内蔵ダンパーダイオード@E～C
  • 高いワット損: PC= 1.3 W (Ta=25°C)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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KSD1692YS

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

Y

NPN

General Purpose

1.2

3

100

150

8

2

-

4000

12000

-

15

$0.276

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信頼性データ

Die Related Summary Data

Device: KSD1692YS

Equivalent to wafer fab process: TM

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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