General Purpose and Low VCE(sat) Transistors | KSE45H

PNP エピタキシャルシリコントランジスター

Obsolete

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購入

Overview

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  • 低いコレクター/エミッター間飽和電圧: VCE(sat) = -1 V (最大) @ -8 A
  • 高速スイッチング
  • KSE44Hを補完
  • 汎用電源スイッチング

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSE45H11

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

BLKBG

1200

N

PNP

General Purpose

1

10

80

-

5

1.5

-

60

-

40

50

Price N/A

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KSE45H11TU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

PNP

General Purpose

1

10

80

-

5

1.5

-

60

-

40

50

Price N/A

More Details

KSE45H8TU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

PNP

General Purpose

1

10

60

-

5

1.5

-

60

-

40

50

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: KSE45H11

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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