General Purpose and Low VCE(sat) Transistors | KSE800

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  • 高DC電流利得： hFE = 750 (最小) @ IC = 1.5および2.0 A DC
  • KSE700/701/702/703を補完
  • ベース－エミッター抵抗内蔵のモノリシック構造

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

KSE800STU

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

No

NPN

General Purpose

3

4

60

60

5

-

3

750

-

-

40

8.00 x 11.00 x 3.25

$0.4027

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信頼性データ

Die Related Summary Data

Device: KSE800STU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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