General Purpose and Low VCE(sat) Transistors | KSH117

PNP シリコンダーリントントランジスター

Obsolete

Datasheet

購入

Overview

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  • 高DC電流利得
  • E-Cのダンパーダイオード内蔵
  • 表面実装用にリード形成(サフィックスなし)
  • ストレートリード(I-PAK、"-I" サフィックス)
  • 表面実装用に人気のあるTIP117D-PAKと電気的に同等

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Product services, tools and other useful resources related to KSH117

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSH117TF

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2000

N

PNP

General Purpose

3

2

100

100

5

4

2.8

1000

12000

25

20

Price N/A

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信頼性データ

Die Related Summary Data

Device: KSH117TF

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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