General Purpose and Low VCE(sat) Transistors | KSH210

PNP エピタキシャルシリコントランジスター

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  • 高いDC電流利得
  • 低いコレクタ、エミッター間飽和電圧
  • 表面実装用リード形成 (サフィックスなし)
  • ストレートリード(I-PAK、「-I」サフィックス)表面実証用D-PAK

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSH210TF

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Obsolete

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CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2000

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

65

12.5

Price N/A

More Details

KSH210TM

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2500

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

65

12.5

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: KSH210TF

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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