General Purpose and Low VCE(sat) Transistors | MJ14002

60 A、80 V NPN バイポーラ・パワートランジスタ

Lifetime

Datasheet

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Overview

この NPN バイポーラ・トランジスタは、高出力アンプおよびスイッチング回路アプリケーション向けに設計されています。 MJ14001 (PNP) MJ14002* (NPN)、MJ14003* (PNP) は相補型デバイスです。

  • High Current Capability - IC Continuous = 60 Amperes
  • DC Current Gain - hFE = 15-100 @ IC = 50 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
  • Pb-Free Packages are Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJ14002G

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Lifetime

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CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

N

NPN

General Purpose

3

60

80

80

5

4

-

15

100

-

300

$11.4648

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信頼性データ

Die Related Summary Data

Device: MJ14002G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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