General Purpose and Low VCE(sat) Transistors | MJ2955

15 A、60 V PNPバイポーラ・パワー・トランジスタ

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Overview

PNPバイポーラ・トランジスタはハイパワー・アンプやスイッチング・アンプ・アプリケーションで使用するために設計されています。 2N3055（NPN）および MJ2955（PNP）はコンプリメンタリー・デバイスです。

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJ2955G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

Y

PNP

General Purpose

3

15

60

100

7

-

1.5

20

70

2.5

115

$2.3538

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信頼性データ

Die Related Summary Data

Device: MJ2955G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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