General Purpose and Low VCE(sat) Transistors | MJD5731

1.0 A、350 V 高電圧 PNP バイポーラ・パワートランジスタ

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Overview

この高電圧バイポーラ PNP パワートランジスタは、ライン動作のオーディオ出力アンプ、SWITCHMODE 電源ドライバなどのスイッチング・アプリケーション用に設計されています。

  • 350 V (Min) Vceo(sus)
  • 1.0 A Rated Collector Current
  • PNP Complement to the MJD47-50 Series
  • These Devices are Pb-Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJD5731T4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

No

-

General Purpose

1

1

350

-

-

-

-

30

175

10

15

Price N/A

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MJD5731T4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

No

PNP

General Purpose

1

1

350

-

5

-

1.5

30

175

10

15

6.54 x 9.91 x 2.28

$0.2444

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信頼性データ

Die Related Summary Data

Device: MJD5731T4G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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