General Purpose and Low VCE(sat) Transistors | MJE172

3.0 A、80 V PNP バイポーラ・パワートランジスタ

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Overview

MJE170/180 シリーズは、低電力オーディオ・アンプと高電流高速スイッチングのアプリケーション向けに設計されています。MJE170、MJE171、MJE172 (PNP) および MJE180、MJE181、MJE182 (NPN) は相補型デバイスです。

  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 60 Vdc - MJE171, MJE181
    VCEO(sus) = 80 Vdc - MJE172, MJE182
  • DC Current Gain -
    hFE = 30 (Min) @ IC = 0.5 Adc
    hFE = 12 (Min) @ IC = 1.5 Adc
  • Current-Gain - Bandwidth Product -
    fT = 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages -
    ICBO = 100 nA (Max) @ Rated VCB
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJE172

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

-

General Purpose

1.7

3

-

-

-

-

-

50

250

50

12.5

Price N/A

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MJE172G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

Y

PNP

General Purpose

1.7

3

80

100

7

2

1.2

50

250

50

12.5

$0.2808

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信頼性データ

Die Related Summary Data

Device: MJE172G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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