General Purpose and Low VCE(sat) Transistors | MJE2955T

バイポーラ・パワートランジスタ、PNP、10 A、60 V、75 W

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Overview

このバイポーラ・パワートランジスタは汎用アンプやスイッチング・アプリケーション向けに設計されています。MJE2955T (PNP) および MJE3055T (NPN) は相補型デバイスです。

  • DC Current Gain Specified to 10 Amperes
  • High Current Gain - Bandwidth Product -
    fT = 2.0 MHz (Min) @ IC
    fT = 500 mAdc
  • Pb-Free Packages are Available

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE2955T

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

8

10

60

-

-

-

-

20

100

2

125

Price N/A

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MJE2955TG

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

8

10

60

70

5

-

1.8

20

100

2

125

$0.4173

More Details

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信頼性データ

Die Related Summary Data

Device: MJE2955TG

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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