General Purpose and Low VCE(sat) Transistors | MJE350

0.5 A、300 V PNP バイポーラ・パワートランジスタ

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Overview

PNP バイポーラ・パワートランジスタは、PNP 機能を必要とする低電力、ライン動作の直列パスおよびスイッチング・レギュレータなどのライン動作アプリケーションで使用するように設計されています。

  • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
  • Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc
  • Pb-Free Package is Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

MJE350G

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Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

PNP

General Purpose

-

0.5

300

-

3

-

-

30

240

-

20

10.85 x 7.60 x 2.70

$0.3293

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信頼性データ

Die Related Summary Data

Device: MJE350G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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