General Purpose and Low VCE(sat) Transistors | MJE4353

16 A、160 V PNP バイポーラ・パワートランジスタ

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Overview

このバイポーラ・パワートランジスタは、高出力オーディオ・アンプ・アプリケーションや高電圧スイッチング・レギュレータ回路で使用するために設計されています。MJE4343 および MJE4353 は相補型デバイスです。

  • High Collector-Emitter Sustaining Voltage -

    VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC
    = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJE4353

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Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

PNP

General Purpose

-

-

160

-

-

-

-

15

-

1

125

Price N/A

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MJE4353G

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CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

PNP

General Purpose

-

-

160

-

-

-

-

15

-

1

125

Price N/A

More Details

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