General Purpose and Low VCE(sat) Transistors | MJE5850

8.0 A、300 V PNP バイポーラ・パワートランジスタ

Obsolete

Datasheet

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Overview

MJE5850、MJE5851、および MJE5852 トランジスタは、立ち下がり時間が重要な誘導回路の高電圧、高速、電力スイッチング向けに設計されています。

  • Switching Regulators
  • Inverters
  • Solenoid and Relay Drivers
  • Motor Controls
  • Deflection Circuits

  • Pb-Free Packages are Available

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Orderable Parts:

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE5850

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

2

8

300

-

-

-

-

15

-

-

80

Price N/A

More Details

MJE5850G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

2

8

300

-

6

1.5

-

15

-

-

80

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: MJE5850G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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