General Purpose and Low VCE(sat) Transistors | MJF32C

PNP バイポーラ・パワートランジスタ

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Overview

このバイポーラ・パワートランジスタは、汎用アンプやスイッチング・アプリケーション向けに設計されています。MJF31C (NPN) および MJF32C (PNP) は相補型デバイスです。

  • Collector–Emitter Saturation Voltage
    –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector–Emitter Sustaining Voltage
    – VCEO(sus) = 100 Vdc (Min)
  • High Current Gain – Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • UL Recognized, File #E69369, to 3500 VRMS Isolation
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJF32C

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

-

General Purpose

1.2

3

-

-

-

-

-

10

50

3

30

Price N/A

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MJF32CG

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

PNP

General Purpose

1.2

3

100

100

5

-

1.8

10

50

3

30

$0.4696

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信頼性データ

Die Related Summary Data

Device: MJF32CG

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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