General Purpose and Low VCE(sat) Transistors | MJF45H11

PNP バイポーラ・パワートランジスタ

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Overview

このバイポーラ・パワートランジスタは、スイッチング・レギュレータ、コンバータ、パワーアンプといった、アプリケーションの出力段やドライバ段などの汎用パワーアンプ/スイッチング向けに設計されています。MJF44H11 (NPN) および MJF45H11 (PNP) は相補型デバイスです。

  • Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available

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Orderable Parts:

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJF45H11

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

PNP

General Purpose

1

10

80

-

-

-

-

60

-

-

50

Price N/A

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MJF45H11G

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

PNP

General Purpose

1

10

80

-

5

1.5

-

60

-

-

50

$0.6401

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信頼性データ

Die Related Summary Data

Device: MJF45H11G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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