General Purpose and Low VCE(sat) Transistors | MJW18020

高電圧、プレーナ NPN バイポーラ・パワートランジスタ

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Overview

MJW18020 プレーナ高電圧パワートランジスタは、DC の高い再現性とスイッチング・パラメータによりブリッジ構成のデッド・タイムを最小限にするモータ制御アプリケーション、高電源および UPS に特化して設計されています。

  • High and Excellent Gain Linearity
  • Fast and Very Tight Switching Times Parameters tsi and tfi
  • Very Stable Leakage Current due to the Planar Structure
  • High Reliability
  • Pb-Free Package is Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJW18020

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

General Purpose

1.5

30

-

-

-

-

-

14

34

-

250

Price N/A

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MJW18020G

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Active

CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

Y

NPN

General Purpose

1.5

30

450

1000

9

1.5

-

14

34

-

250

$3.7999

More Details

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信頼性データ

Die Related Summary Data

Device: MJW18020G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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