General Purpose and Low VCE(sat) Transistors | MMBT4126LT1

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Overview

PNP シリコン

  • Moisture Sensitivity Level: 1
  • ESD Rating--Human Body Model: >4000 V; Machine Model: >400 V
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MMBT4126LT1

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Obsolete

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SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

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MMBT4126LT1G

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CAD Model

Pb

A

H

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SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

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MMBT4126LT3G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

10000

N

PNP

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0.4

0.2

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信頼性データ

Die Related Summary Data

Device: MMBT4126LT1G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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