General Purpose and Low VCE(sat) Transistors | MMBT5551M3

高電圧 NPN バイポーラ・トランジスタ

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Overview

この高電圧 NPN バイポーラ・トランジスタは、当社の定評ある SOT-23 3 リード・デバイスのスピンオフです。汎用スイッチング・アプリケーション向けに設計されており、SOT-723 表面実装パッケージに収められています。基板スペースの節約が重要な低電力表面実装アプリケーションに最適です。

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MMBT5551M3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.2

0.06

160

180

6

1

-

80

250

-

0.64

$0.0181

More Details

NSVMMBT5551M3T5G

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Active

CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.2

0.06

160

180

6

1

-

80

250

-

0.64

$0.0367

More Details

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信頼性データ

Die Related Summary Data

Device: MMBT5551M3T5G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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