General Purpose and Low VCE(sat) Transistors | MMBT5771

PNP スイッチング・トランジスタ

Obsolete

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Overview

この PNP スイッチング・トランジスタは 100 mA までのコレクタ電流で超高速飽和スイッチング向けに設計されています。ソースはプロセス 65 です。特性については PN4258 を参照してください。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MMBT5771

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Obsolete

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Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

PNP

General Purpose

0.6

0.2

15

15

4.5

1.5

-

50

120

-

0.225

Price N/A

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信頼性データ

Die Related Summary Data

Device: MMBT5771

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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